Charge collection efficiency mapping of interdigitated 4H–SiC detectors

Correlation of the charge collection efficiency of GaAs particle detectors with material properties

Radiation detectors for room temperature operation based on GaAs have been studied for many years. Devices based on LPE grown material have shown very good results, but it is difficult to produce thick layers of adequate purity to allow sufficient depletion for detection of minimum ionizing particles (mips) or gamma radiation [1]. An alternative that has been studied is the use of semi-insulati...

Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates

High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possi...

Charge -coupled- device charge -collection efficiency and the photon- transfer technique

Characterization and Modeling of Non-Uniform Charge Collection in CVD Diamond Pixel Detectors

A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip telescope. Non-uniformities were observed on a length scale comparable to the diamond crystallites size. In some regions of the sensor, the charge drift appears ...

Charge collection measurements with p-type Magnetic Czochralski Silicon single pad detectors

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 cm the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measure...